金刚石薄膜研究与制备情况.pptVIP

金刚石薄膜的研究与制备情况;主要内容; 金刚石的结构;金刚石的特性与应用;高透光性 红外到紫外范围均可透过，可制成光学元件的镀层、红外窗口等。 高弹性模量(1200GPa)和高的声波传播速度(18000m/s) 可制成高保真扬声器的振动膜。 电学方面：宽禁带、高载流子迁移率、低介电常数、高击穿电压等，可制成高温半导体器件(600℃)，用于耐强辐射器件。 此外，可制成发光材料、色心激光材料、“黑色钻石”等。;金刚石制备历史的简要回顾;金刚石薄膜制备的特点; 金刚石薄膜制备的主要CVD方法;热灯丝CVD法（Hot Filament CVD）;热灯丝CVD装置示意图; 微波等离子体CVD法(Microwave Plasma CVD) ; 微波CVD装置示意图;金刚石薄膜制备的总趋势 ;国内外金刚石薄膜研究的主要进展(90年代); 类金刚石DLC;当前金刚石薄膜的研究重点;金刚石薄膜的最新研究进展 ;紫外发光的实现;主要的成果 ;意义;Fig. 1. Impurity depth profile of pn junction measured by SIMS, where solid circles represent phosphorus (31P) and open squares represent boron (11B).;Fig. 2. Representative I-V characteristics of diamond pn junction. In the linear plot (A), the voltage shows the applied voltage to p-type diamond. In the semi-logarithmic plot (B), the forward direction corresponds to the case when the negative voltage was applied to n-type diamond;Fig. 3. Optical emission spectra of the pn junction operated with forward current of (A) 1,?(B) 5,?and (C) 10?mA. A representative CL spectrum of P-doped diamond thin film taken at room temperature is shown in (D). The inset is a representative optical image of the diamond LED with light emission. The circular-shaped electrodes (diameter, 150?μm) are formed by the separating each other by 150?μm. Light emission can be seen around the electrode located at the center of the image;Si片上CVD法外延生长的金刚石的AFM图象;形核和生长机理1 ;主要内容 ;Fig. 1. (A) Cross-sectional HRTEM image of a film grown by prolonged hot filament bias-enhanced nucleation. (B) Planar view transmission electron diffraction (TED) pattern of the same film showing the diamond spacings. (C) Cross-sectional TED pattern of an ion beam-deposited film. In (A), ~5- to 10-nm diamond crystallites are embedded in the amorphous carbon matrix. Graphitic lobes in (C) are oriented graphitic planes associated with the diamond crystallites;Fig. 2. (A) Structure of an a-C:H cell with 128?C atoms (gray) and 43?H atoms (white) (density 3?g/cm2, 25?at%H) derived using tight-binding density functio