半导体物理与器件第三版(尼曼)05章答案.docVIP

Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 5 Solutions Manual Problem Solutions Chapter 5 Problem Solutions 5.1 O = and (a) n 1016 cm 3 ? b g 2 6 2 n 1.8x10 p = = ? i O n 10 16 O pO = x cm 3.24 10?4 ?3 (b) J e n = μ Ε n O N 4.63x1013 cm 3 d = ? (d) σ ≈ eμ p ? p O b g 0.01 = 1.6 10 19 480 x ? ( )p O or or pO = x cm = Na ? Nd = Na ? 1.30 1014 ?3 1015 a =N 1.13x1015 cm 3 ? Note: For the doping concentrations obtained, the assumed mobility values are valid. For GaAs doped at N 1016 cm 3 , d = ? μn ≈ 7500 cm2 /V ? s Then b g b g J = 1.6x10 7500 10 10 ?19 ( ) 16 ( ) or J = 120 A / cm2 (b) (i) pO = cm O = 1016 ?3 , n 3.24x10 4 cm 3 ? ? (ii) For GaAs doped at N 1016 cm 3 , a = ? μ p ≈ 310 cm2 /V ? s J = eμ p Ε p O b g b g 1.6x10 310 10 10 ?19 ( ) 16 ( ) = ? J = 4.96 A / cm2 5.2 (a) V IR 10 0.1R = ? = ? ( ) R 100 = ? (b) L L R = ? σ = ? σA RA 10 ? 3 σ = b g ? (100 10 ) ?3 σ = 0.01 cm ( ) ? ? ?1 (c) σ ≈ e N μ n d or b g 0.01 1.6x10 1350 N = ?19 ( ) d or 5.3 ρL L (a) R = = and σ ≈ eμ N A σA n d For N x cm n ≈ 1100 cm2 /V ? s d = 5 1016 ?3 , μ Then 0.1 R = b g b g b g 2 1.6 10 19 1100 5 1016 100 10 4 x ? ( ) x ( ) ? or R = 1.136x104 ? Then I I = 0.44 mA = V = 5 ? R 1.136x104 (b) In this case R = 1.136x103 ? Then I I = 4.4 mA R 1.136x103 = V = 5 ? (c) Ε = V L 5 For (a), Ε = = 50V / cm 0.10 And vd = μnΕ = (1100)(50) or vd = 5.5x104 cm / s V 5 For (b), Ε = = = 500V / cm L 0.01 And vd = (1100)(500) ? vd = 5.5x105 cm / s 53 Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 5 Solutions Manual Problem Solutions 5.4 (a) GaAs: ρ L V 10 L R 0.5 k? = = = = = A I 20 σA Now σ ≈ eμ N p a For N 1017 cm 3 , μ p ≈ 210 cm2 /V ? s a = ? Then b g b g σ = 1.6x10 210 10 = 3.36 ? ? cm ? ( ) ( )? 19 17 1 So or L = R A = ( )( ) x σ 500 3.36 b85 10 8 g ? L = 14.3 μm Then d 10 ? 4 t 1.33 10 11 = = ? t = 6 t x s ? t v 7.5x10 d (b) Silicon: For Ε = 50 kV / cm , vd = 9.5x106 cm / s Then d 4 10? t 1.05 10 11 = = ? 6 tt = x s ? t v 9.5x10 d GaAs, v