有机电致发光材料与元件的应用.pptVIP

p.* The upper limit for the EL efficiency in OLED ΦEL ΦPL * Φout * RS/T 电致发光效率5~6% 光致发光效率 ITO玻璃光透射效率20~25% 激子中单线态比例25% + - e-+h+ Polaron pair* Exciton* Singlet Triplet 1 : 3 ? 利用掺杂磷光体的方法可以大比例提高OLED的电致发光效率！ The external efficiency of OLED (ηext ) : Photoluminescence Quantum Efficiency : Charge Balance Factor : Ratio of Singlets to Triplets : Output Coupling Efficiency p.* Luminescence Mechanism phosphorescence Guest/Host System in OLED Host Guest S T S T F?rster ET Dexter ET ISC hv e-+h+ Charge Trapping Charge trapping means that the Guest captures the electron or/and hole of the Host. When the HOMO of the Guest is larger than it of the Host, the Guest will then capture the hole of the Host (hole trap). When the LUMO of the Guest is smaller than it of the Host, the Guest will then capture the electron of Host (electron trap). In Ir(piq)3/PFO system, the Ir(piq)3 is both hole trap and electron trap relative to PFO. HOMO LUMO Host Guest PFO Ir(piq)3 year author PLED performance 1999 R. H. Friend et. al. First phosphorescent dopant in OLED EL from ITO/CBP/PtOEP/Al External efficiency = 5.8 % ! 2002 Canon ITO/CBP/ Ir(piq)3 /Ca/Al 8.0lm/W,External efficiency = 10.3 % ! 1999 S. R. Forrest et. al. ITO/CBP/ Ir(ppy)3 /Ca/Al 28cd/A, 31lm/W, External efficiency = 8.0 % ! 2001 H.Z. Xie et al. ITO/CBP/ Ir(mppy)3 /Ca/Al 10.2cd/A, External efficiency ~12 % ! 2003 F. Sato et al. ITO/CDBP/FIrpic /Ca/Al External efficiency : 10.4% ! 2005 S.J. Teh et al. ITO/SimCP/FIrN4/Ca/Al 7.2lm/W, External efficiency ~9.4 % ! p.* The phosphorescent dopant in OLED PtOEP Ir(piq)3 Ir(ppy)3 Ir(mppy)3 FIrpic FIrN4 See reference 11-16 Polymer OLED Small-molecule OLED 使用材料 高分子（Mw＞10,000):材料钝化较难、较怕氧 小分子（Mw＜3,000):材料钝化容易、较怕水 厂家分布 欧美 日本、韩国和台湾 制作方法 旋转涂布法、喷墨法或印刷法：制作简单、步骤少、材料使用率高 真空蒸镀法：制作较复杂、蒸镀率低、较易与一般半导体制程整合 设备 总投资金额较低（无尘室占相当比例） 总投资金额高（主要在多腔体蒸镀设备）、较易自动化 元件结构 只需要两层（HTL/EL)即可得到极佳的元件 需要三层以上的结构 产能 普通 较低 柔 韧 性 可弯曲 难以弯曲 生产成本 更低 相对较高 亮 度 目前仍低于OLED 高 效 率 目前仍低于OLED 高 制成稳定性