表面重构课薛其坤2知识课件.ppt

4. Typical reconstruction surfaces 4.1 Metal Surfaces 4.2 Insulator Surfaces 4.3 Semiconductor Surfaces  4.1 Metal Surface Although most metal surfaces are relaxed instead of recosntruction, some noble and near-noble fcc metals, Au, Ir, Pt and bcc transition metals, W and Mo, display recosntructions. W?ll et al. Phys. Rev. B 39, 7988-7991(1989) 1x2 missing-row reduces the surface energy. Pt(110), Au(110) T. R. Linderoth, S. Horch, E. L?gsgaard, I. Stensgaard, and F. Besenbacher, PRL,78,4978 4.2 Insulator Surfaces NaCl (111)-1x1 Hebenstreit et al.,Phys. Rev. Lett. 85, 5376(2000) (a) 50nm x 50 nm, 21.2 V, 0.06 nA. (b) NaCl(111) island with atomic resolution (7nm x 7 nm, 21.2 V, 0.3 nA). (c) Structure model of an NaCl(111) island. C(100)-2x1 Bobrov et al., Natrue 413, 616(2001) 4.3 Semiconductor Surfaces Chem. Rev. 96, 1237-1259 (1996) Charles B. Duke STM on III-V (100) Surface Reconstructions Xue et al., Progress in Surface Science 56, p001-p131(1997) Element semiconductor surface Si(100) industry Si(111) cleaved Ge(111) Ge(100) K.Oura, V.G.Lifshits et al. <Surface Science-An Introduction> Si(001) surface (001) Dimerization: reduce dangling bonds (110) Si(100)-2x1 Tromp et al., PRL 1985 Si(100)-2x1 → c(4x2) filled states (-1.0 V) empty states (1.0 V) at 63K. Unit cell Takashi Yokoyama* et al. PRB,61,8 Si(111) Si(111)-2x1 7x7 disorder”1x1” (metastable) Heating to about 400 Heating to about 850 irreversibly reversibly Si(111)-2x1 K.C.Pandey,PRL,47,26 The ?-bonded chain model by Pandey for the cleaved Si(111)-2x1 structure. Compound semiconductor surface GaAs(110) GaAs(100) GaAs(111) Very complicated! GaAs(110) The GaAs(110) is the cleavage surface, the reconstructed surface still preserves an ideal 1x1 periodicity. Such a reconstruction is typical for zinc blende structure III-V semiconductors with buckling angle GaAs(110) R. M. Feenstra et al., PRL 1987 110 As Ga empty