memory存储芯片nandcbr4n4azbc5eif中文规格书.docxVIP

CHANGE WRITE COLUMN (85h) The CHANGE WRITE COLUMN (85h) command changes the column address of the selected cache register and enables data input on the last-selected die (LUN). This command is accepted by the selected die (LUN) when it is ready (RDY = 1; ARDY = 1). It is also accepted by the selected die (LUN) during cache program operations (RDY= 1;ARDY 二 0). Writing 85h to the command register, followed by two column address cycles containing the column address, puts the selected die (LUN) into data input mode. After the second address cycle is issued, the host must wait at least CCS before inputting data. The selected die (LUN) stays in data input mode until another valid command is issued. Though data input mode is enabled, data input from the host is optional. Data input begins at the column address specified. The CHANGE WRITE COLUMN (85h) command is allowed after the required address cycles are specified, but prior to the final command cycle (lOh, llh, 15h) of the following commands while data input is permitted: PROGRAM PAGE (80h-10h), PROGRAM PAGE MUETI-PLANE (80h-llh), PROGRAM PAGE CACHE (80h-15h), COPYBACK PROGRAM (85h-10h), and COPYBACK PROGRAM MUETI-PLANE (85h-llh). In devices that have more than one die (LUN) per target, the CHANGE WRITE COLUMN (85h) command can be used with other commands that support interleaved die (multi- LUN) operations. Figure 44: CHANGE WRITE COLUMN (85h) OperationAs defined for PAGEAs defined for PAGE Figure 44: CHANGE WRITE COLUMN (85h) Operation As defined for PAGE As defined for PAGE 16Gb, 32Gb, 64Gb Asynchronous/Synchronous NAND Synchronous Interface Timing Diagrams Figure 89: RESET (FCh) OperationtCH Figure 89: RESET (FCh) Operation tCH CLE /LV CLE / L V ? \ 1 I 1 1 1 / / ( L 「CALS tCALH v ? ? tCALS kALH tCAD tCALH W/R#DQSALE/CLKtWB「CASkAH W/R# DQS ALE / CLK tWB 「CAS kAH DQ[7:0]K FCh * DQ[7:0] tRSTSYNCHRONOUSRESET command tRST R/B# Dont Care MT41J64M16JT-107: G MICRON 原厂原装 BGA ,12500 MT41J64M16JT-107G MICRON 原厂原