memory存储芯片nandd3r4n5azcc5eif中文规格书.docxVIP

32Gb, 64Gb, 128Gbf 256Gb Asynchronous/Synchronous NAND Error Management Error Management Each NAND Flash die (LUN) is specified to have a minimum number of valid blocks (NVB) of the total available blocks. This means the die (LUNs) could have blocks that are invalid when shipped from the factory. An invalid block is one that contains at least one page that has more bad bits than can be corrected by the minimum required ECC. Additional blocks can develop with use. However, the total number of available blocks per die (LUN) will not fall below NVB during the endurance life of the product. Although NAND Flash memory devices could contain bad blocks, they can be used quite reliably in systems that provide bad-block management and error-correction algorithms. This type of software environment ensures data integrity. Internal circuitry isolates each block from other blocks, so the presence of a bad block does not affect the operation of the rest of the NAND Flash array. NAND Flash devices are shipped from the factory erased. The factory identifies invalid blocks before shipping by attempting to program the bad-block mark into every location in the first page of each invalid block. It may not be possible to program every location with the bad-block mark. However, the first spare area location in each bad block is guaranteed to contain the bad-block mark. This method is compliant with ONFI Factory Defect Mapping requirements. See the following table for the first spare area location and the bad-block mark. System software should check the first spare area location on the first page of each block prior to performing any PROGRAM or ERASE operations on the NAND Flash device. A bad block table can then be created, enabling system software to map around these areas. Factory testing is performed under worst-case conditions. Because invalid blocks could be marginal, it may not be possible to recover this information if the block is erased. Over time, some memory locations may