BSS138W-SOT323广东奥科半导体.pdf免费

BSS138W Main Product Characteristics: VDSS 50V RDS(on) 1.4Ω (typ.) I 0.2A D Marking and Pin SOT-323 Schematic Diagram Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  ESD Rating：1000V HBM  150℃operating temperature Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating: Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V① 0.2 A IDM Pulsed Drain Current② 0.8 PD @TC = 25°C Power Dissipation③ 0.2 W VDS Drain-Source Voltage 50 V VGS Gate-to-Source Voltage ± 20 V TJ TSTG Operating Junction and Storage Temperature Range -55 to +1