10L100D TO-252广东奥科半导体.pdf免费

10L100D TO-252 Trench MOS Barrier Schottky Rectifier Reverse Voltage - 100 V Forward Current - 10 A FEATURES Advanced trench technology  Low forward voltage drop  Low power losses  High efficiency operation  Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL DATA  Case: TO-252(D-PAK) Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.32g / 0.0 11oz Maximum Ratings (Per Leg) at Ta=25°C unless otherwise specified Parameter Symbols Value Units Maximum Repetitive Peak Reverse Voltage VRRM 100 V Maximum RMS voltage VRMS 100 V Maximum DC Blocking Voltage VDC 100 V Maximum Average Forward Rectified Current Per diode IF(AV) 10 A Peak Forward Surge Current, 8.3ms Single Half Sine-wave IFSM 160 A superimposed on rated load per diode Operating Temperature Range TJ -55 ~ +150 °C Storage Temperature Range TSTG -55 ~ +150 °C Typical Thermal Resistance Per diode(munted on TO-252 RθJA 8 °C/W FR-4 PCB) Note1: Thermal resistance from Ju