场效应MOS管AK60NP2012K参数20A-12A+-60V封装TO-252-4L.pdf免费

AK60NP2012K AK NP-Channel complementary Power MOSFET Description The AK60NP2012K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features N channel Schematic diagram ● V =60V,I =20A DS D RDS(ON) 35mΩ @ VGS=10V RDS(ON) 40mΩ @ VGS=4.5V p channel ● V =-60V,I =-12A DS D RDS(ON) 100mΩ @ VGS=-10V RDS(ON) 125mΩ @ VGS=-4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability 100% UIS TESTED! Application ● H-bridge 100% ∆Vds TESTED! ● Inverters Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 60NP2012K AK60NP2012K TO-252-4L - - - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 60 -60 V Gate-Source Voltage VGS ±20 ±20 V T =25℃