场效应MOS管AK0202M参数2A200V封装SOT-89-3L.pdf免费

AK0202M AK N-Channel Enhancement Mode Power MOSFET Description The AK0202M uses advanced trench technology and D design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. G General Features ● V = 200V,I =2A DS D S RDS(ON) 580mΩ @ VGS=10V (Typ:520mΩ) Schematic diagram RDS(ON) 600mΩ @ VGS=10V (Typ:540mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 0202M AK0202M SOT-89-3L Ø330mm 12mm 2500 units Absolute Maximum Ratings (T =25℃unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage VDS 200 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 2