场效应MOS管AK40H21C参数210A40V封装TO-220.pdf免费

AK40H21C AK N-Channel Enhancement Mode Power MOSFET Description The AK40H21C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● V =40V ,I =210A DS D RDS(ON) 2.5mΩ @ VGS=10V Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply 100% UIS TESTED! 100% ∆Vds TESTED! Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity NCE40H21C NCE40H21C TO-220-3L - - - Absolute Maximum Ratings (T =25℃unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 210 A Drain Current-Continuous(T =100℃) I (100℃) 148 A