微纳电子材料与工艺10薄膜表征透明导电tft.pptxVIP

移动电子产品的两大趋势Trends in Portable Device;电子材料技术的进步，新型电子产品开始走进生活;关键材料——透明导电薄膜;透明导电金属薄膜;透明导电氧化物薄膜;;透明导电氧化物薄膜Transparent Conductive Oxide Films;氧化物薄膜SnO2;氧化物薄膜ITO;氧化物薄膜ZnO;Flexible displays are attractive for portable devices such as cell phone, laptop, e-book and wearable due to their lightweight, low power consumption, and being bendable. ;Oxide-based Flexible Transparent Thin Film Transistors;半导体薄膜材料的性能对比;AOS TFT Drivers;显示领域 ;;;;;Requirements for TCOs in flexible transparent TFTs applications ;TFTs on flexible substrates;InGaZnO TFTs on PET;;Conduction behavior of transparent conductive oxides (TCOs);High transparency : available for transparent TFTs Room temperature process : available for plastics substrate Can be used as electrodes, or channel layers : by adjusting O2 ratio High field effect mobility : 10 ~ 50 cm2V-1S-1 Large area deposition : By sputtering machine Rapid Process Low cost ;Speed and Mobility Trends of TFTs Amorphous Oxide Semiconductors (AOS);Multi-Component Ternary Oxides;Density of States;Trap-Limited Conduction (EFEm);Percolation Conduction (EFEm);Field Effect Mobility;IZO/IGZO Heterojunction Phototransistor;Responsivity and Gain;Display with Embedded Photosensor;Transparent Sensor Array for Non-Touch Interactivity and Invisible Image Capture;;推荐书籍;导电氧化物薄膜的制备技术;喷涂;Sol-Gel;化学气相沉积 (CVD) 根据气压等级分类 1Torr=133Pa 常压化学气相沉积 （APCVD, 760 Torr） 次大气压化学气相沉积 （SACVD, 10~760Torr） 低压化学气相沉积 （LPCVD, 0.1~10 Torr) 超低压化学气相沉积 （ULPCVD, 0.1 Torr) ;CVD Growth;;各种制备方法的对比;ITO薄膜各种制备方法的对比;氧化物薄膜ZnO;氧化物薄膜ZnO;导电薄膜的电学性能;Petritz模型-在多晶薄膜总，传到机制主要是由晶界而不是晶粒内特性控制。晶界含高密度界面态，它们俘获自由载流子，形成界面势垒，并能散射自由载流子;沉积工艺对电学性能的影响 ;导电薄膜的光学性能;禁带宽度-Tauc Plot;什么原因致使AZO在红外波段透射率降低;?;TCO在太阳能电池中的应用;ZnO 纳米线;Substrate: Glass;Decay of an organic solar cell with time under constant UV illumination. Measurements taken under AM 1.5 conditions;Self-Cleaning;CVD 生长ZnO纳米线的条件;;;;薄膜的厚度—台阶仪;测量膜厚—光学干涉仪;;表面结构形貌;扫描电镜;;;光学电学测试;;;霍尔迁移率;霍尔电压;范德堡法;椭偏仪;荧光光谱（PL）;;;;The van der Waals forces, which are strongest from 1 nm t