(2.6.6)--6.6半导体技术导论.pptVIP

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  • 2023-08-19 发布于广东
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Etching and metallization EtchingGas/Liquid Wet etching: HF eats up SiO2Isotropic (side etching issue), low precision, needs mask to be selectiveCost-effectiveDry etching - Reactive ion etchingMainstream of modern IC etching techniqueGood selectivity, anisotropic (no side etching issue)Fig. 5-8 Reactive ion etcherEtching Metallization

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