(2.6.4)--6.4半导体技术导论.pptVIP

Thermal oxidationDiffusionRTPIon implantation6.4 Oxidation and doping technology Thermal oxidationSiO2SiSiO2 Dry oxidation Si+O2 ? SiO2Wet oxidation Si+2H2O ? SiO2+2H2Thermal oxidation Thermal oxidation Diffusion length: L= (Dt)1/2 Dt is called thermal budgetIdea: Use high temperature to force diffusion of impurity atomsTypical T: 800-1000 ?CDiffusity: D=D0exp(-EA/kT) Strong dependence on TDiffusion RTPProcess time↑ ? thermal budget ↑ ? diffusion length ↑ Disadvantage of diffusion:Low precisionHard to heavily dopeHigh temperature leads to high density of surface defect Ion