考虑温度效应的统计学EM分析方法在FINFET设计上的应用.pptxVIP

Thermal-awareSEBMethodologyforFinfetdesignEMsignoff

StatisticalEMBudgeting(SEB)Introduction2?2017ANSYS,Inc.July31,2017ANSYSUGM2017HistoricallydesignershavecomparedinterconnectDCaveragecurrenttoaconservativefixedlimitas,S=Jdesign/JmaxSoifS=1,the“design”isreliable,whileanyinterconnectwithS1needstoberedesigned.Fromtheprocessreliabilityperspective,EMdegradationisinherentlystatistical.Thereisalwaysobservedawidedispersioninthetimesobservedforidenticallysizedandstressedsegmentsofinterconnecttoprogresstofailure.Whenreliabilitydesignisdesignedtomean“achievingachip-levelreliabilitygoal,fixedcurrentdensitydesignlimitsbecomemathematicallyarbitrary.Onlythetotalstatisticalrisktothechipisthemeaningful.TheniftheEMreliabilityimpactofeachsegmentofinterconnectateachstresslevelcanbeaccountedfor,thechip-levelEMreliabilitygoalcanbebudgetedamongclassesofinterconnectorchipdesignsubdivisionstominimizetheperformancelimitations.

SEBMethodologyStatisticalEMBudgeting(SEB)isadesign-specificEMreliabilityevaluationmethodwhichcombinesdesigninputswithEMperformanceforeachinterconnectwiretocomputeatotalfailureratefortheproduct.A“pass”isascertainedifthedesignstaywithinthefailurebudget.SEBgivesthedesignerssomeflexibilityindesignwithoutimposingahardEMlimitforthewholeproduct,thusenablinghigherperformancewithoutcompromisingreliability.3?2017ANSYS,Inc.July31,2017ANSYSUGM2017

FailureinTime(FIT)CalculationperWireLT=lifetimeeg5or10years.?=stdnormalcumulativedistributionprobabilitySdc=severityratioofIdc,I/Imax:I-fromdesign,Imax-definedindesignrulemanual.n=currentdensityexponent(fromfoundry)MTF=mediantimetofailureMTF(Tfit)=MTF(Tamb)*exp(Ea/Kb*(1/(Tfit+273)-1/(Tamb+273)))Tamb=AmbientTemperature;Tfit=Tamb+?Tfromself-heati