Ruichips-RU8205G宏盛微优势代理80.pdfVIP

RU8205G

N-ChannelAdvancedPowerMOSFET

FeaturesPinDescription

•20V/6A,

RDS(ON)=21mΩ(Typ.)@VGS=4.5V

RDS(ON)=28mΩ(Typ.)@VGS=2.5V

•LowR

DS(ON)

•SuperHighDenseCellDesign

•RReliliablbleanddRRuggedd

•LeadFreeandGreenDevicesAvailable(RoHSCompliant)

TSSOP-8

D1D2

pp

Applications

•PowerManagement

G1G2

S1S2

DualDualNN-ChChannelannelMOSFETMOSFET

AbsoluteMaximumRatings

SymbolParameterRatingUnit

CommonRatings(T=25°CUnlessOtherwiseNoted)

A

VDSSDSSDrain-SourceVoltageg20

VV

VGSSGate-SourceVoltage±12

TJMaximumJunctionTemperature150°C

TSTGStorageTemperatureRange-55to150°C

IDiodeContinuousForwardCurrent