半导体的资料Poly-Etch-Introduction.pptVIP

P.1多晶矽(複晶矽)蝕刻簡介Poly(Silicon)EtchIntroduction

Outline:PolyprocessintroductionProcessgasintroductionPolyetcherintroduction-RIEintroduction-PolychamberintroductionP.2

PolyprocessintroductionP.3Dryetchmechanism

EtchProcessSequenceP.4

PolysiliconEtch–ProcessstepProcesssteps:BreakthroughRemovalofnativeoxide,energeticAr+bombardmentMainetchHighpolyetchrate,ClandHBrchemistryEndpoint/timemodeOveretchPreciselyprofilecontrolbychamberP.5

ProcessControlEndpointDetectionP.6光學放射頻譜分析是最有用的終點偵測器，因為它可以很容易地在蝕刻設備上面且不影響蝕刻的進行，還有他對反映的些微變化可以靈敏的偵測，以及可提供有關蝕刻反應過程中，許多有用的資訊。但是光學放射頻譜分析仍有一些缺點與限制：一是光線強度正比於蝕刻速率，所以對蝕刻速率較慢的蝕刻而言將變的難以偵測。另一個限制則是當蝕刻面積很小時，信號強度將會不足，而使終點偵測失敗，如二氧化碳接觸窗的蝕刻。若在接觸窗外提供一大面積SiO2來蝕刻，則可增強信號強度，但此大區域的蝕刻速率又大於接觸窗的蝕刻速率，亦即微負載效應(MicroloadingEffect)，因此仍須要過度蝕刻以確保接觸窗能完全蝕刻。Uniformity:123

OpticalEmissionSpectroscopyP.7

EtchEndpointWavelengthsP.8Wavelength(?)

ProcessgasintroductionPolysilicon:-Cl2/O2/He-HBr/O2/HeSitrench-Cl2/HBr/O2/He-NF3/Cl2/O2/HeAlCu/Ti/TiN-Cl2/BCl3/Ar/N2/CHF3/CH4P.9GeneraletchprocessgasSiO2:-CF4/CHF3/O2/Ar-C4F8/CO/Ar-CHF3/CO/Ar-C5F8/C4F6…Si3N4:-CF4/CHF3/Ar-SF6/CF4/HBr/Ar-CH3F/CH2F2/O2/Ar

ProcessgasintroductionP.10

Processgasintroduction–PolyetchP.11CF4forbreakthroughnormalgasPoly/Metaletchusedgas

PolyetcherintroductionP.12

PolyetcherintroductionP.13

ReactiveIonEtch(RIE)CombinationofchemicalandphysicaletchPlasmaprocess,ionbombardmentplusfreeradicalsMisleadingname,shouldbecalledionassistantetch(IAE)HighandcontrollableetchrateAnisotropicandcontrollableetchprofileGoodandcontrollableselectivityAllpatternedetchesareRIEprocessesin8”fabsP.14

SchematicofanRIESystemP.15ProcessgasesPlasmaProcesschamberBy-productstothepumpChuckRFPowerHeliumForbacksidecoolingMagnetcoilsWafer

Polyetcherintroduction–TEL88SCCMP.16TEL