晶体管阈值电压偏差监测的测试芯片设计与研究.pdfVIP

Abstract

Nowadays,thedevelopmentofIntegratedCircuit(IC)hasenteredthenano-meter

age;anddesignrules,manufacturingtechnologiesandprocessflowsofICbecomevery

complicated.AsICfeaturesizecontinuestoshrink,themanufacturingtechnologyof

ICsatisfiespeople’sneedsforhighperformanceandlowpowerconsumptionof

functionchips,butprocessvariationintheICmanufactureprocesshasgradually

becomeavitalfactoraffectingchips’reliabilityandstability.Especially,threshold

voltage(Vth)ofatransistorisverysensitivetoWIDprocessvariation.Thethreshold

voltageofatransistorisacriticalparametertocharacterizetheperformanceofthe

transistor,theVthvariationaffectstherobustnessoffunctionchipstoanextent.Atest

chipformonitoringthethresholdvoltagevariationoftransistors,notonlycanmeasure

theVthvariationoftransistorsforfoundriesbutalsoishelpfultoachievereal-time

monitoringoffunctionchipreliabilityandstabilityforfablessICcompanies.

ThisthesisproposesatestchipmonitoringtheVthvariationoftransistorsbased

ontheexponentialrelationshipbetweensub-thresholdleakagecurrentandthreshold

voltage.Utilizinganoscillationstructure,thechipestablishestherelationshipbetween

thresholdvoltagevariationofatransistor,sub-thresholdleakageofthetransistorand

periodsofpseudo-ringoscillation.BysequentiallyselectingDUTsinthepseudo-ring

oscillation,theperiodvariationofpseudo-ringoscillationcanbeacquired,inorderto

obtainthethresholdvoltagevariationofthetransistorwithacorrespondingsize.The

designmainlytakescareoftheaspectsforachievingsmallarea,lowpower,andhigh

accuracymonitoringasfollow:

（1）Introducinganaddressablecircuitdesignbasedonacounter;

（2）Introducin