面向低磨损存内计算的多状态逻辑门综合.pdfVIP

计算机研究与发展

Journal

of

Computer

Research

and

Development62（3）：620−632，2025

面向低磨损存内计算的多状态逻辑门综合

11,211,2111

赵安宁许诺刘康罗莉潘炳征薄子怡谭承浩

1

（国防科技大学计算机学院长沙410073）

2

（先进微处理器芯片与系统重点实验室（国防科技大学）长沙410073）

（zhaoanning@）

TheSynthesisofMultipleStatefulLogicGatesforIn-memoryComputingwithLow

Wear

1

1,2

1

1,2

1

1

1

Zhao

Anning,

Xu

Nuo,

Liu

Kang,

Luo

Li,

Pan

Bingzheng,

Bo

Ziyi,

and

Tan

Chenghao

1

（SchoolofComputerScienceandTechnology,NationalUniversityofDefenseTechnology,Changsha410073）

2

（KeyLaboratoryofAdvancedMicroprocessorChipsandSystems(NationalUniversityofDefenseTechnology),Changsha410073）

AbstractBy

merging

the

functions

of

Boolean

logic

and

non-volatile

memory,

memristive

stateful

logic

can

achieve

the

real

sense

of

in-memory

computing

through

eliminating

data

movement

during

computation,

which

breaks

the

“memory

wall”

and

“energy

wall”

of

traditional

von

Neumann

computing

system.

In

recent

years,

a

series

of

the

memristor-based

in-memory

stateful

logic

gates

have

been

proposed

by

linking

the

conditional

switching

process

and

mathematical

logic

function,

whose

functions

cover

multiple

logic

functions

such

as

IMP,

NAND,

NOR,

and

NIMP

etc.

However,

the

automated

synthesis

and

mapping

method

for

implementing

the

in-memory

complex

stateful

logic

computation

by

cascading

the

stateful

logic

gates

is

still

embryonic,

especially

lacking

the

investigations

on

the

device

wear,

which

limits

the

application

of

in-memory

stateful

logic

i