微电子技术论文7581090.pdfVIP

IEEETRANSACTIONSONELECTRONDEVICES,VOL.63,NO.11,NOVEMBER20164309

SubgapStateEngineeringUsingNitrogen

IncorporationtoImproveReliabilityof

AmorphousInGaZnOThin-FilmTransistors

inVariousStressingConditions

GongTanLi,RunZeZhan,Bo-RuYang,ChuanLiu,ChengYuanDong,Chia-YuLee,Yuan-ChunWu,

Po-YenLu,ShaoZhiDeng,Han-PingD.Shieh,Fellow,IEEE,andNingShengXu

Abstract—InstabilityofamorphousInGaZnOthin-filmtran-I.INTRODUCTION

sistors(a-IGZOTFTs)remainsanobstacleforcommercial-

ization.Here,wesystematicallydiscusstheeffectofnitrogenURRENTLY,mostoftheflatpaneldisplaydevicesuse

incorporationona-IGZOTFTstabilityanddevelopedAr/O2/N2Chydrogenatedamorphoussilicon(a-Si:H)astheactive

atmospheretoimprovethestabilityunderstressingindifferentlayerinTFTs.However,thea-Si:HTFTstechnologyfaces

conditions.BasedonX-rayphotoelectronspectrometerresults,

itisrevealedthatthepositivegatebiasstress(PGBS)stabilityisitsdevelopmentbottleneckduetoitslowfield-effectmobility

significantlyimprovedduetomicroscopicallypassivatedmetal–(1cm2V−1s−1).Consequently,theTFTswithamorphous

oxygenbonds.Yet,thenegativegatebiasandlightstressoxidesemiconductor(AOS)asactivelayerreceivedwide

(NBLS)stabilityisseriouslydeterioratedwithheavilynitrogenattentionastheycouldsimultaneouslyofferhighfield-effect

incorporationprobablyduetothebandgapnarrowingeffect.By