微电子技术论文7600833.pdfVIP

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  • 2026-08-11 发布于浙江
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High-frequencyInGaAstri-gateMOSFETsAsmall-signalmodelwasdeterminedfromthemeasured

withfmaxof400GHzS-parameters,withagoodfittothemeasurementdata[8].Fig.3

showsmeasuredandmodelled(dashedtraces)unilateralpowergain

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