N-In共掺的ZnO薄膜的制备及光电性能研究.pdfVIP

1 ，制备ZnO 共掺，N-In ：磁控溅射，关键词 型。p 现出所期望的 型，没有表n 取向，具有较高的透射率，电学性能测试表明薄膜的导电类型为 2 轴C 元素成功掺入到薄膜中，薄膜具有较好的N 源，N 为 N 控溅射方法，以 薄膜，并对其进行了结构、形貌及光学和电学性能的研究。结果表明：利用磁 nOZ共掺的N-In 共掺的原理制备出了N-In 本论文以磁控溅射的方法，利用 研究中面临的主要挑战。ZnO也是 颈， 实际应用的瓶ZnO型掺杂由于其固有的极性却非常困难，这是目前制约p的 OZn 很容易实现，但是ZnO 型n 结。高质量的p-n 同质ZnO材料，并实现ZnO 型p 型和n 要实现在光电领域的广泛应用，首先必须获得性能良好的ZnO 料。 有着极大的应用潜力，如紫蓝光发光二极管和激光器等，可作为白光的起始材 在短波长光电器件领域ZnO 得高效的紫外激子发光，引起了人们广泛的关注。 的激子束缚能高，可以在室温条件下获ZnO 作为一种宽禁带半导体材料， 要要 摘摘 要 摘 薄膜的制备及光电性能研究ZnO 共掺的N-In N-In 共掺的ZnO薄膜的制备及光电性能研究 Abstract As a wide bandgap semiconductor material, ZnO have been drawn widespread attention, because of its higher exciton binding energy and efficient UV-induced emission. Therefore, ZnO has great potential applications in the field of short wavelengthoptoelectronicdevices,suchaspurpleandbluelight-emittingdiodelaser, canbeusedasthestartingmaterialofwhitelight. To achieve the broad applications in the field of optoelectronic, we must first get a good performance n-type and p-type ZnO materials, and to achieve ZnO p-n junction. High-quality n-type ZnO is easy to achieve, but the p-type doping ZnO is very difficult because of its inherent polarity, which currently restrict ZnO practical application. N-In co-doped ZnO films were prepared with magnetron sputtering method and using N-In co-doped principle in this paper and its structure, morphology and optical and electrical properties of the films were studied. The results showed that: by using magnetron sputtering, and N as N source