AN-7533：具有动态温度补偿功能的改进版MOSFET模型-.pdfVIP

October 2003 Application Note 7533 October 2003 A Revised MOSFET Model With Dynamic Temperature Compensation Alain Laprade, Scott Pearson, Stan Benczkowski, Gary Dolny, Frank Wheatley Abstract An empirical self-heating SPICE MOSFET model which accurately portrays the verti- cal DMOS power MOSFET electrical and thermal responses is presented. This mac- romodel implementation is the culmination of years of evolution in MOSFET modeling. This new version brings together the thermal and the electrical models of a VDMOS MOSFET. The existing electrical model [2,3] is highly accurate and is recog- nized in the industry. Simulation response of the new self-heating MOSFET model track the dynamic thermal response and is independent of SPICE’s global tempera- ture definition. Existing models may be upgraded to self-heating models with relative ease. 1. Introduction Many power MOSFET models available today are based on an ideal lateral MOSFET device. They offer poor correlation between simulated and actual circuit performance in several areas. They have low and high current inaccuracies that could mislead power circuit designers. This situation is further complicated by the dynamic perfor- mance of the models. The ideal low power SPICE level-1 NMOS MOSFET model does not account for the nonlinear capacitive characteristics Ciss, Coss, Crss of a power MOSFET. Higher level SPICE MOSFET models may be used to implement the non-linear capacitance with mixed results. The inherent inaccuracies of modeling a power VDMOS with the SPICE MOSFET model dictated the need for an alternative approach; a macro-model. A macro-model such as the one defined by Wheatley and Hepp [1] can address the short comin