多孔SiCO陶瓷中SiC纳米线的原位合成及生长机理.pdfVIP

第 28 卷 第 5 期 无 机 材 料 学 报 Vol. 28 No. 5 2013 年 5 月 Journal of Inorganic Materials May, 2013 文章编号: 1000-324X(2013)05-0474-05 DOI: 10.3724/SP.J.1077.2013.12353 多孔 SiCO 陶瓷中 SiC 纳米线的原位合成及生长机理 潘建梅, 程晓农, 严学华, 张成华, 徐桂芳 (江苏大学 材料科学与工程学院, 镇江 212013) 摘 要: 采用聚氨酯海绵为多孔模板, 浸渍有机硅树脂后在 Ar 气氛中原位合成了 SiC 纳米线。采用 TG 、XRD 、SEM 和 TEM 等分析测试手段对样品进行了表征, 研究了保温时间对合成 SiC 纳米线的影响, 并探讨了 SiC 纳米线的生 长机理。研究结果表明: SiC 纳米线生长在多孔陶瓷中, 纳米线长度达几十微米, 单根纳米线的直径不均一。SiC 纳 米线的生长机理为 VS 生长模式。随着保温时间的延长, 纳米线的数量增加, 形貌发生了变化, 且多孔陶瓷的比表 面积明显增大, 体积电阻率降低。 关 键 词: SiC 纳米线; 聚合物先驱体; 多孔陶瓷; 原位合成 中图分类号: TQ174 文献标识码: A In situ Synthesis and Growth Mechanism of SiC Nanowires in SiCO Porous Ceramics PAN Jian-Mei, CHENG Xiao-Nong, YAN Xue-Hua, ZHANG Cheng-Hua, XU Gui-Fang (School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013, China) Abstract: SiC nanowires were in situ prepared in Ar atmosphere using polyurethane sponge as a porous template infiltrated with silicone resin. Characterizations of the samples were carried out by TG, XRD, SEM and TEM. The effects of the holding time on the synthesis of SiC nanowires were observed. The growth mechanism of SiC nanowires was discussed. The experimental results show that SiC nanowires were grown directly within the pores of the porous ceramics. The lengths of these nanowires are up to several tens of micrometers and single nanowire has a districtive diameter. The growth mechanism of the nan