衬底对开路电压影响.docVIP

Substrate effects on the electronic properties of an organic/organic heterojunction 有机/有机异质结中衬底对电子性质的影响 The electronic structures of copper-phthalocyanine/tris
8-hydroxyquinoline aluminum CuPc/Alq3 heterojunctions on Mg and indium tin oxide
ITO substrates have been studied by photoemission spectroscopy. While the typical vacuum energy level lineup occurred at the CuPc/Alq3 junction on ITO, the same junction formed on Mg displayed vastly different electronic structures, showing a 0.5 eV band bending associated with the formation of a space charge layer. The substrate effects were explained by the proximity of the Mg’s Fermi level to the lowest unoccupied molecular orbital of CuPc, resulting in spontaneous charge transfer. The results show the feasibility of tuning the electronic properties of an organic heterojunction via the Fermi level of the substrate. 人们已经通过光激发光谱研究了Cu/Alq3异质结在Mg和ITO衬底上的电子结构。然而典型的能级lineup只发生在ITO衬底上的Cu/Alq3异质结，同样的异质结在Mg衬底上会有完全不同的电子结构，表现出0.5V能带弯曲，形成一个空间电荷层。这个衬底作用是因为Mg的费米能级接近CuPc的LUMO能级，使电荷自发转移。结果表明可以通过调整衬底的费米能级来改变有机异质结的电子性质具有可行性。 In recent years, considerable efforts have been directed at developing high-efficiency organic electronic and optoelectronic devices.1–3 In a multilayer device structure, junctions formed between different organic semiconductors play a crucial role in various electronic processes including charge injection, electron-hole recombination, and dissociation.3–5 These processes are influenced by the discontinuity in the local energy levels at the interface. Thus, an accurate picture of the relative positions of molecular energy levels at organic/organic interfaces is essential for the optimization of device performance. 最近几年，研发高效率的有机电子和光电子器件方面取得了很大的进步。在多层器件结构中，有机半导体之间的结起到关键作用，不同有机半导体之间的结具有不同的电子活动如电荷注入、电子-空穴复合和激子解离。这些电子活动受到界面处能级不连续性的影响。因此，为了优化器件性能，有必要画出有机/有机界面处分子能级的相对位置。 Studies in the past show that the assumption of vacuum level alignment in the Schottky-Mott model does not give an accurate account of the electro