InAs%2fGaSb超晶格界面光学各向异性研究.pdfVIP

InAs/GaSb超晶格界面的光学各向异性研究 武树杰 俞金玲 高寒松 蒋崇云 陈涌海 中国科学院半导体研究所材料重点实验室，北京 100083 摘要:在室温下采用偏振反射差分光谱测量了InAs/GaSb超晶格平面内光学各向异性，在GaAs界面厚度保持不变的情况下研究 了不同厚度InSb界面对超晶格平面内光学各向异性的影响。并利用高分辨XRD测量了不同的InSb界面厚度对超晶格晶格失配 的影响。分别在InAs和GaSb的r(E0，E0＋△0)和^(E1，E1+△1)临界点观察到了平面内光学各向异性信号。InSb界面的厚度的增加 减小了超晶格的应变，临界点能量发生移动。InAs和GaSb上下界面的不对称性可以解释平面内光学各向异性的来源，分析了应 变对各向异性的影响， 关键词:InAs/GaSb超晶格；平面内光学各向异性；反射差分光谱 O484.1；O472+.3 In-planeopticalanisotropyofInAs/GaSbsuperlattices ShujieWuJinlingYuHansongGaoChongyunJiangYonghaiChen KeyLaboratoryofSemiconductorMaterialsScience,InstituteofSemiconductors,ChineseAcademyofSciences,P.O.Box912,Beijing 100083,China Abatrset:Them-planeopticalanisotropy(IPOA)ofInAs/GaSbsuperlattices(SLs)hasbeenobservedbyreflectancedifference spectroscopyatroomtemperature,InAs/GaSbSLshavetobegrownwithGaAsorlnSbinterfaces,becauseofnocommoncationand anion.ThemismatchoflatticeconstantisrelaxedbyGaAsorInSbinterfacelayers.TwoInAs/GaSbSLssampleswerepreparedby molecularbeamepitaxy(MBE)withdifferentInSbinterfacethicknessandsamethicknessofGaAsinterface.DifferentInSbinterface thicknessimpactonIPOAofInAs/GaSbSLshasbeeninvestigated.ThecrystalconstantmismatchofSLswasmeasuredbyhigh resolutionXRD.Wemeasuredtherelativereflectancedifferencebetween[110]and[ll0]instructions:Ar/r=(r110-r11o)/2(r110+r110).The IPOAfeatureswereobservedatinterbandtransitionatcriticalpointsenergiesF(Eo,Eo+Δo)andA(E1,E1+Δ1)ofInAsandGaSb.The criticalpointsenergiesareshiftwithaddinglnSblayerthickness.Theopticalanisotropyisattributedtothesymmetryreductionfrom idealD2dtoC2vacrossinterfaces.TheupanddowninterfaceofInAslayerarenonequivalent,correspondingtoGaAsuplayerandInSb downlayer,respectively.TheIn-Asbondsononesidearecompressstrain,whileontheothersidearetensilestrain.Itisasimilar conditionforGaSblayer.HighresolutionXRDresultsshowthatth