低色温高显色性大功率白光LED的制备及其发光特性研究.pdfVIP

17 12 　2006 12　　　　　J o urnal of Op toelectronics L aser 　　　　　　　Vol. 17 No. 12　Dec.2006 低色温高显色性大功率白光LED 的制备及其发光 * 特性研究* 1 ** 1 1,2 郑代顺 , 钱可元, 罗　毅 (1., , 518055;2. , , 100084) :GaN LED , LED LED。, LED , LED, , ; , , , , , ; LED , LED , LED , LED, 。 : LED;;; :TN383　　:A　　:1005-0086(2006)1-2 142-2 05 Fabrication and Luminescence Characteristics Studies of the High-power White LEDs with Low Tc and High Ra 1 ** 1 1,2 ZHENG Da-i shun , QIAN Ke-yuan , LUO i (1.Graduate School at Shenzhen, Tsinghua University, Shenzhen 518055, China;2.State Key Laboratory of Integrated Optoelectronics, Tsinghua University, Beijing 100084, China) Abstract :GaN-based blue LEDchips were used as exciting light source, hig-hpower white LEDs with different correlative color temperature (Tc )and rendering index (Ra )were fabricated through phosphor conversion and red LED compensation. The luminescence characteristics of white LED devices, suchas emissionspectrum,chromaticity coordinate, Ra, luminous flux (Υ), luminous efficiency (η), and their changes at various forward cu-r rent (IF)and content of red phosphor (C)were studied. Results indicate that, combining 3+ blue LEDchipand single AG:Ce yellow phosphor,white LEDs withhigh Υand ηcould c a be obtained, but T of these devices is relatively high, and R is very low. Adding red phosphor intoyellow phosphor,the emergenceof red light inthe emissionspectraof these devices results in Tc reduce