工艺参数和热处理温度对ZrW_2O_8薄膜制备的影响.pdfVIP

真 　空 　科 　学 　与 　技 　术 　学 　报 第 2 8 卷 　增刊 　　　　　　　　　　　　 　　　　　　 4 2 CHIN ESE JOURNAL OF VACUUM SCIENCE AND TECHNOLO GY 2008 年 5 月 　 工 艺 参 数 和 热 处 理 温 度 对 ZrW O 薄 膜 制 备 的 影 响 2 8 刘红飞 　程晓农 3 　张志萍 　付廷波 (江 苏大 学 材料科学与工程学 院 　镇江 　212013) Deposit ion Con dit ion s an d Gr owt h of Zr W O 2 8 3 Liu Hongfei ,Cheng iaonong ,Zhang Zhiping ,Fu Tingbo ( School of Materials Science an d Engineering , J i ang su Universit y , Zhenjiang 212 013 , Chin a) 　　Abstr act 　The ZrW O films were grown by RF magnetron sp uttering of WO and ZrO compo site ceramic target on 2 8 3 2 glass substrates . The films were characterized with 2ray diffraction ( RD) ,and scanning electron micro scopy ( SEM) . The results show t hat the deposition conditions and annealing temp erat ure strongly affect the surface morphology and prop2 erties of the films . For instance ,the deposition rate increases with the increase of RF power ;and as the working p ressure rises up , it fir stly increases and then drops down. As the annealing temp erature increases ,the fairly smooth , compact , amorp hous films start crystallizing ,with the grain growing slowly. The triangular ro d2like Zr