模拟集成电路设计经验总结【荐】.docVIP

Basic precautions and tips that an Analog Designer should know.半导体,微电子,集成电路,IC,工艺,设计,器件,封装,测试,MEMS( b4 Z! c) B% d/ J/ L??}. P3 @, U! y??\ A1. Minimum channel length of the transistor should be four to five times the minimum feature size of the process. We do it, to make the lambda of the transistor low i.e. the rate of change of Id w.r.t to Vds is low.??o- U2 J2 T: G7 e. R L??V* . b s) ]$ F# p半导体,微电子,集成电路,IC,工艺,设计,器件,封装,测试,MEMS晶体管最小沟长为工艺最小特征尺寸的4-5倍，用来减小沟长调制效应 J8 }??L7 f??|8 P??A: b2 j2 X2. Present art of analog design still uses the transistor in the saturation region.So one should always keep Vgs of the Transistor 30% above the Vt.( D. { a! l4 I: C8 p( X5 ^7 ?=半导体,微电子,集成电路,IC,工艺,设计,器件,封装,测试,MEMS% j6 H, D1 P% y% \半导体,微电子,集成电路,IC,工艺,设计,器件,封装,测试,MEMS目前模拟设计仍然是使晶体管工作在饱和区，故应使Vgs大于Vt约30%: S2 o???$ y4 T x2 K B Q??K- ~0 @) C2 L$ Q=半导体,微电子,集成电路,IC,工艺,设计,器件,封装,测试,MEMS3. One should always split the big transistor into small transistors having width or length feature size or = 15um. [ { K# D5 H2 K$ P7 t$ d% K=半导体,微电子,集成电路,IC,工艺,设计,器件,封装,测试,MEMS/ I+ o6 R. U G- L5 Y??~ }6 h=半导体,微电子,集成电路,IC,工艺,设计,器件,封装,测试,MEMS应把大管分成小晶体管，使其宽/长特征尺寸或=15um半导体,微电子,集成电路,IC,工艺,设计,器件,封装,测试,MEMS/ q- s$ |3 {3 H, f4 [. m??z4 P g- L3 [1 @3 u: |* }=半导体,微电子,集成电路,IC,工艺,设计,器件,封装,测试,MEMS4. W/L Ratio of transistors of the mirror circuit should be less than or equal to 5, to ensure the proper matching of the transistors in the layout. Otherwise, it results to the Systamatic Offset in the circuit.=半导体,微电子,集成电路,IC,工艺,设计,器件,封装,测试,MEMS7 G. _9 i+ i. c1 C! Z9 B8 U0 ~%电流镜电路的晶体管的w/l比应小于或等于5，以保证较好的Matching,否则会有系统失调8 \ }9 g; t) q* q5. One should make all the required pins in the schmetic before generating the layout view. Because it’s diffcult to add a pin in the layout view. All IO pins should be a metal2 pins whereas Vdd and Ground should be metal1 pins4 h* V, Y! }??Z3 ?, M* I; h4 k7 X3 ]: b* Y在电路中画出所有的管脚（pin），之后才作layout。因为在layout中增加一个pin是比较困难的。所有的IO pin应该用metal2 pin，Vdd和GND用metal1 pin半导体,微电子,集成电路,IC,工艺,设计,器件,封装,