SiC沉积的机理研究.pdfVIP

第37 卷第 10 期 硅 酸 盐 学 报 Vol. 37 ，No. 10 2 0 0 9 年 1 0 月 JOURNAL OF THE CHINESE CERAMIC SOCIETY October ，2009 SiC 沉积的机理研究 李 玫，乔生儒，张程煜，韩 栋 (西北工业大学，超高温结构复合材料国家重点实验室，西安 710072) 摘 要：在石墨基底上采用低压化学气相沉积法沉积SiC，沉积室是热壁。H2 载气通过鼓泡法将三氯甲基硅烷(methyltrichlorosilane, MTS)送入沉积室， –2 –1 沉积基底的面积和沉积室的体积比为 1× 10 mm 。沉积参数为：压力5 kPa，温度1 100 ℃，H2 的流量为150mL/min ，气相成分中H2 和MTS 的流 量比为 10。结果表明：较大的液态聚基体表面能低，小液滴在大液滴表面沉积。H2 流量小时，小液滴沿大液滴的生长锥顶部环状沉积，各生长锥间 有间隙。H2 流量增加时，小液滴无序的分散在大液滴的表面上。据此提出了一种可能的SiC 的沉积和生长机理。 关键词：碳化硅；化学气相沉积；沉积机理；液滴 中图分类号：TQ174 文献标志码：A 文章编号：0454–5648(2009)10–1624–04 INVESTIGATION FOR A POSSIBLE MECHANISM OF SiC DEPOSITION UNDER LOW-PRESSURE CHEMICAL VAPOR DEPOSITION LI Mei，QIAO Shengru，ZHANG Chengyu ，HAN Dong (National Key Laboratory of Thermostructure Composite Materials, Northwestern Polytechnical University, 547 Mailbox, Xi′an 710072, China) Abstract: SiC was deposited by low-pressure chemical vapor deposition on the surface of a graphite substrate, which was situated in a hot wall reactor. The methyltrichlorosilane (MTS) vapor in the reactor chamber was obtained with H2 carrier gas going through a bubbler maintained at 22 –2 –1 ℃, using the substrate surface area/reactor volume ratio of 1 × 10 mm , under condition of reduced pres- sure P5 kPa and at 1 100 ℃. The flow rate of H was 150 mL/min, and the gas phase composition H to MTS is 10. The results indi- 2 2 cate that the surface energy of a larger droplet i