二氧化硅基质包埋硅纳米晶的微观结构和发光性能.pdfVIP

23 ? 4 Vol.23 No.4 2 0 0 9 8 CHINESE JOURNAL OF MATERIALS RESEARCH August 2 0 0 9 ? 1 1 G.G.ROSS2 1. 308 266071 2.INRS-EMT, 1650 boulevard Lionel-Boulet, Varennes, Canada J3X 1S2 SiO , 2 , . : 5 nm Ostwald , 10 nm ; 8 ×1016cm?2 3 ×1017cm?2 5 . , , , , O472, O483 1005-3093 2009 04-0352-05 Microstructure and optical properties of Si nanocrystals embedded in SiO2 ?lm WANG Yiqian1?? LIANG Wenshuang1 ROSS Guy2 1.The Cultivation Base for State Key Laboratory, Qingdao University, No.308, Ningxia Road, Qingdao, 266071 2.INRS-EMT, 1650 boulevard Lionel-Boulet, Varennes, Canada, J3X 1S2 * Supported by the Scienti?c Research Funding for the Introduced Talents at Qingdao University No.0座机电话号码 and National Science and Engineering Research Council, Canada No. STPGP307205-04. Manuscript received January 8,2009; in revised form April 22, 2009. ** To whom correspondence should be addressed, Tel: 0532 座机电话号码, E–mail: yqwang1013@ ABSTRACT Si nanocrystals have been fabricated in SiO2 ?lm using ion implantation followed by high-temperature annealing. The microstructure and optical properties of the samples with di?erent Si+ implantation doses were investigated, and the growth mechanism and light emission mechanism were explored. The experimental results indicated that for small Si nanocrystals 5 nm , the growth mechanism conforms to Ostwald ripening; while for the big ones 10 nm , the coalescence of small nanoparticles through twinning is dominant. The photoluminescence PL investigation showed that the PL spectrum intensity from the sample with an implantation dose of 3×1017/cm2 dropped by a factor of 5 compared with 16 2 that from the sample with an implantation dose of 8 ×10 /cm . The correlation between microstructure and PL indicated that the microstructural defects, such as twinning and stacking faults inside the Si nanocrystals have a great in?uence on the PL intensity. KEY