Characterization of two Field-Plated GaN HEMT Structures.ppt

May 6th, 2004 Hongtao Xu, Qualifying Exam Characterization of two Field-Plated GaN HEMT Structures Hongtao Xu, Christopher Sanabria, Alessandro Chini, Yun Wei, Sten Heikman, Stacia Keller, Umesh K. Mishra and Robert A. York Electrical and Computer Engineering University of California at Santa Barbara Supported by ONR Outline Motivation Introduce two field-plated device structures and their analysis DC and Small-signal measurements Power characterization Noise characterization Conclusion Motivation Optimize GaN HEMT performance from the device structure level. Use field-plated GaN HEMT structure for high power microwave circuits. Further improve the power capacity, PAE and breakdown. GaN HEMT for low noise applications. Field-plated device structures (I) Field-plated device structures (II) Field-plated device structure Gate resistance Rg Rg modeling EM simulation at 4 GHz DC measurement Intimately connected FP device has higher pinch-off voltage. Both devices have similar Idss at Vgs=0 V. SP measurement (ft, fmax) Small signal model and simulation Intrinsic small signal parameters Power Characterization Noise characterization (I) Noise characterization (II) Conclusion Two field-plated device structures were characterized and analyzed. The structure with intimately connected field-plate helps to reduce the gate resistance, but the larger Cgd reduces the gain and efficiency. The noise performance of field-plated device is better than non-field-plated device. * GaN 2DEG Drain Source Gate SiN Field Plate Field-plate is connected to the gate through the common path of the gate and gate feeder in the extrinsic device region. GaN HEMT devices of 32 W/mm was reported with this structure. Most commonly used structure. Field-plate length AlGaN GaN Drain Source Gate Field Plate 2DEG SiN Field-plate length Gate and field-plate are intimately connected. RIE etching of SiN may damage the AlGaN surface. AlGaN Field-plate length GaN AlGaN 2DEG Drain Source SiNx Gate Field-