化学浴沉积法合成硒化铋纳米结构薄膜.pdfVIP

第28 卷 第2期 总第124期 V o l1 2 8 No1 2 J ournal of M at erials Science Engineering A pr . 20 10 : 1673- 2812( 2010 02- 0248- 04 , ( , 200050; , 100049 = , , , , =001 50 ~ 100nm 9. 2 @ 103 Sm- 1 - 9 8LV K- 1 , 2 3 = Bi Se ; : T B43; T B383 : A Nanostructured Bi2Se3 Films Prepared by hemical Bath Deposition SUN Zheng-liang, HEN Li-dong (Shanghai Institute of eramics, hinese Academy of Science, Shanghai 200050, hina; Graduate University of the hina Academy of Science, Beijing 100049, hina) =Abstract Recent ly, low dimensional thermo elect ric mat er ials hav e at t ract ed v ario us int erest s becau se of their pro mising t ranspo rt propert ies. H ow ev er, sy nt hesis met hods w ere of t en rest ricted to hig h- cost vapo r methods. In t he pr esent w ork , nanost rucut red Bi2 Se3 f ilms w er e prepared by f acial chemical bat h deposit ion 3 3 2 3 ( CBD m et hod. Bi( N O and N a SeSO w er e u sed as bismut h and selenium sources, and nitr ilo tr iacet ic acid and silicon as chelat ed reag ent and substr at e, respect iv ely . T he sy nt hesized Bi2 Se3 f ilms w ere com posed of ( 001 o rient at ion nano sheet s, 50- 100nm in t hickness. E lectr ical conduct ivity and Seebeck co ef ficient at room 3 - 1 - 1 temperature are 9 . 2 @ 10 Sm and - 98LV K , respectively. Synt hesis m et hod used here is low- co st , easy- operat ed and scalable-