脉冲激光沉积AlN薄膜的结构表征和性能研究进展.pdfVIP

AlN / 45 A lN * , , ( , 530004) 脉冲激光沉积法( PL D) 以其低温成膜优势被公认为是宽禁带半导体A lN 薄膜的优选制备 法获得 高质量的A lN 薄膜需要最佳的薄膜/ 衬底匹配和工艺参数综述了各种常见异质外延衬底与A lN 薄膜的取向关系, 分析了影响薄膜质量的工艺因素, 介绍了薄膜在电光热 面的性能研究现状, 并指出了今后工作的 向 AlN Development of Structural Characteri ation and Properties of AlN Film Prepared by Pulsed Laser Deposition XIE Shang sheng, HE H uan, FU Yuechun ( Key Labor atory of New Pr ocessing T echnolo gy for No nferrous M etal M aterials of M inist ry of Educatio n, Colleg e of M ater ial, Guangx i Univ ersity , N anning 530004) Abstract Pulsed laser depo sitio n( PL D) has beco me an opt imi ed technique to fabr icate the w ide bandgap A lN sem iconductor film due to its low deposit ion temper atur e. Optimal film/ substr ate mat ching and pr ocessing par ameters are needed to obtain high-qualit y AlN films. In this paper, the orientat ion relat ionship between sever al hetero sub- st rates and A lN films is r ev iew ed. T he effect of pr ocessing par ameter s o n the film quality is analy ed. T he electro nic, optical, thermal propert ies of A lN films are intr oduced. T he directio n of further r esear ch is also briefly discussed. Key words pulsed laser depo sition, AlN film, substr at e, processing parameter s, property AlN , AlN 0 , A lN - , 1 AlN , GaNInNSiC [ 1] AlN , 1. 1 ( 6. 2eV) ; , - GaNInN , 1. 9~ 6. 2eV , , ; , Knudsen , SiGaAs , ; ( )