射频磁控溅射法低温制备ZnOZr透明导电薄膜及特性研究.pdfVIP

第29卷第3期 真空科学与技术学报 OFVACUUM AND 2009年5、6月 a卸NESEJOURNAL SC住NCETECHNOl0CY 287 射频磁控溅射法低温制备 ZnO：Zr透明导电薄膜及特性研究 张化福’ 刘汉法类成新袁长坤 (山东理工大学物理与光电信息技术学院淄博255049) Growthand of ZnO：Zr PropertiesTransparentConducting RF Films atLow by MagnetronSputteringTemperatures Huafu。，LiuUanfa，Lei Zhang Chengxin，YuanChangkun (School and 255049，Ch／na) ofPhysicsOptic-ElectronicInformation，Shandongw,a娜uyofTechno／ogy，Z／bo AbstractThemicrostructuresand ofthe ZnO：Zr RF propertiestransparentconductingfilms，depositedby mag- water-cooledsubstratesatroom characterizedwith netron 011 dass temperature，were X—ray sputtering electron conventional resultsshowthatthe ZnO：Zrfilmscon— scanning microscopy(SEM)andprobes．The polycrystalline sistof structureswithc-axisasthe orientationnormaltothe thatthefilm hexagonalcrystal preferredgrowth substrate，and affectsthe and of tIlickness electronic thefilms．Forinstance．thefilm试t}lat}lickness significantlymorphology properties of300nlnhasthelowest X10—3Q‘am．Allthefilmshavea transmittancewith adhesion resistivity．1．77 fairlyhigh strong attheinterfaceofthefilmsandthesubstrates． zinc喇de KeywordsZirconium-dopedfilms；Transparentconductingfilms；MagnetIonsputtering；Filmthickness； Optic—electronic properties 摘要利用射频磁控溅射法在室温水冷玻璃衬底上制备出了可见光透过率高、电阻率低的掺锆氧化锌(ZnO：压)透明导 过92