BFO中极化转动对电阻态及输运行为的影响.pptVIP

Resistance and transport behavior accompanying polarization switching in BFO * Presented by: Rongli Gao Group M03 State Key laboratory of magnetism Institute of Physics Supervisor: Prof. Jirong Sun 2012-12-24 Content 1. Background and Motivation 2. Experiments 3. Results and discussion 4. Summary Background and Motivation BiFeO3: multiferroic material JPCM 20 (2008)434220; Nature Materials 5 (2006) 823 (1) G-type antiferromagnetic order: With TN~643K ; weak ferromegnetism J. Wang et. al, Science.299, 1719(2003) (2)Ferroelectric order: with Tc~1100K; Large polarization Pr ~100uC/cm2 Polarization along (111) direction Pseudo cubic structure with c/a=1.016, H. T. Yi et. al, Adv. Mat. 23,3403(2011); Switchable rectifying behavior and photovoltaic effect Background and Motivation C. Wang et al, APL. 98,192901(2011); D. Lee et al, PRB 84,125305(2011) (1) Rectifying behavior is interesting due to its potential application in the non-volatile memory technology. (2) However, switchable rectifying and transport behaviors occur accompanying polarization changes and the polarization were considered only in fully upward or fully downward polarized states. (3) Few works have been made about the rectifying and transport behavior and the intermediately polarized states. (4) The influence of polarization fatigue process on photo-current has not been studied yet. Background and Motivation Sample structures: Ag/Bi0.9La0.1FeO3/La0.7Sr0.3MnO3/SrTiO3 Ag BLFO-(500nm) LSMO-(30nm) STO Experiments and Results Methods: pulse laser deposition (PLD) (a) LSMO films as bottom electrodes were deposited on SrTiO3 (STO) substrates. (Temperature:700℃；oxygen pressure:50Pa; deposition frequency of 1Hz; with the laser energy of 1.2 J/cm2) (b) BLFO films were deposited on LSMO buffer layer.(Temperature:650℃ ；oxygen pressure:15Pa; deposition frequency of 1Hz; with the laser energy of 1.2 J/cm2 ; cool down to RT at 2℃/min in the atmosphere of 100Pa) (c) Ag films were deposited by on BLFO as