Al2O3缓冲层对以ZnOA1为阳极的有机电致发光器件性能的影响.pdf

真空科学与技术学报 第31卷第2期 CHINESEJOURNAL0FVAC叫MSCIENCEANDTECHNOLDCY 2011年3、4月 A1203缓冲层对以ZnO：A1为阳极的 有机电致发光器件性能的影响 姚宁1·2’ 邢宏伟2穆慧慧2崔娜娜2葛亚爽2王英俭1张兵临2 (1．中国科学院安徽光学精密机械研究所合肥230031； 2．郑州大学物理工程学院材料物理教育部重点实验室郑州450052) Buffer andCharacteristicsof A1203 Layers OrganicLightEmitting Madeof Films De订ces ZnO AI-Doped Yao Huihui2,Cui Nin91，孙，XingHongwei2，Mu Nana2，Ge‰huan孑，WangYingjianl，ZhangBinglin2 Institute andFine (1．Anhui Mechanicz，Chinese ofOptics AcademyofSc／ences，Heft／230031，Ch／na； 450052，Ch／na) 2．研LaboratoryofMoterialPhysics，MinistryofEducation，DepartmentofPhysics，ZkngzhouVni,脯ity，Zhengzhou The were DC Abstract zinc谢de(AzO)films reactive transparentconductingaluminum-doped depositedby mag- netron 011the substmte．Andthe fabricatedwith device(OLED)，was sputteringglass prototyped，organic—light-emitting AZOand ofthefilm conditionsonthemicrostmcturesandcharacteris— n—propylbromide(NPB)layer．Theimpacts growth with studied．The andthe inthe ticstheOLEDAZOastheanode．Were transmittance experimentauyresistivity average visible oftheAZOfilmswerefoundtobe5．3×10—4Q‘cmand wasthatin- finding range 85％．res