CoTaZr薄膜的制备及结构研究.pdf

CoTaZr薄膜的制备及结构研究／王粤等 · 91· CoTaZr薄膜的制备及结构研究” 王粤，谢致薇，杨元政，周 林，钟焕周，吴金明 (广东工业大学材料与能源学院，广州510006) 摘要 气压、功率对CoTaZr薄膜成分、生长形貌和组织结构的影响。结果表明，溅射功率为96W时，沉积制备的薄膜成分 随Ar气压变化不大，薄膜成分基本稳定。在溅射气压为2Pa、功率为96W时，成功制备出具有非晶+纳米晶结构的 T区或1区转变。 关键词 CoTaZr薄膜磁控溅射非晶纳米晶薄膜 中图分类号：TB43 文献标识码：A ThinFilm ProcessandMicrostructureofCoTaZr Deposition WANG Huanzhou，WU Yue，XIEZhiwei，YANG Lin，ZHONG Jinming Yuanzheng，ZHOU ofMaterialand of 510006) (Faculty Energy，GuangdongUniversityTechnology，Guangzhou thin on substrateatroom DC AbstractTheCoTaZrfilmswere glass temperatureby magnetron deposited Ar and onthe andstructureof method．Theeffectof power composition，morphology sputtering pressuresputtering CoTaZrthinfilmswere meansofEDS．SEMandXRD．TheresultsshoWthattherearenoobvious investigatedby Ar onthethinfilm at96W．CoTaZrthinfilmof effectsofvariationsof pressure compositions structurewas at microstructureofthinfilm turnsfromZone1or talline 2Pa，96W．At2Pa，the prepared gradually TtoZone3withthe of microstructureofthinfilm turns Zone 96W，the increasingsputteringpower．At gradually Ar