《2016 Vertical Nanowire Array-Based Light Emitting Diodes》.pdf

Nano Res (2008) 1: 123 128 DOI 10.1007/s12274-008-8017-4 00123 Research Article Vertical Nanowire Array-Based Light Emitting Diodes Elaine Lai, Woong Kim, and Peidong Yang Department of Chemistry, University of California, Berkeley, CA 94720, USA Molecular Foundry, Material Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA Received: 5 May 2008 / Revised: 22 June 2008 /Accepted: 22 June 2008 ©Tsinghua Press and Springer-Verlag 2008 ABSTRACT Electroluminescence from a nanowire array-based light emitting diode is reported. The junction consists of a p-type GaN thin fi lm grown by metal organic chemical vapor deposition (MOCVD) and a vertical n-type ZnO nanowire array grown epitaxially from the thin fi lm through a simple low temperature solution method. The fabricated devices exhibit diode like current voltage behavior. Electroluminescence is visible to the human eye at a forward bias of 10 V and spectroscopy reveals that emission is dominated by acceptor to band transitions in the p-GaN thin fi lm. It is suggested that the vertical nanowire architecture of the device leads to waveguided emission from the thin fi lm through the nanowire array. KEYWORDS ZnO nanowire, electroluminescence, LED, waveguiding Introduction optoelectronic devices. In addition, ZnO and GaN are well suited materials because of the low lattice GaN and ZnO are promising materials in the field mismatch of about 1.9% in their wurtzite crystal of short wavelength optoelectronics due to their structures [8]. inherently wide and direct bandgaps, 3.39 eV and In this paper, we present a nanowire-based light 3.37 eV, respectively [1, 2]. Nanostructures based emi