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《2016 Vertical Nanowire Array-Based Light Emitting Diodes》.pdf
Nano Res (2008) 1: 123 128
DOI 10.1007/s12274-008-8017-4 00123
Research Article
Vertical Nanowire Array-Based Light Emitting Diodes
Elaine Lai, Woong Kim, and Peidong Yang
Department of Chemistry, University of California, Berkeley, CA 94720, USA
Molecular Foundry, Material Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
Received: 5 May 2008 / Revised: 22 June 2008 /Accepted: 22 June 2008
©Tsinghua Press and Springer-Verlag 2008
ABSTRACT
Electroluminescence from a nanowire array-based light emitting diode is reported. The junction consists of
a p-type GaN thin fi lm grown by metal organic chemical vapor deposition (MOCVD) and a vertical n-type
ZnO nanowire array grown epitaxially from the thin fi lm through a simple low temperature solution method.
The fabricated devices exhibit diode like current voltage behavior. Electroluminescence is visible to the
human eye at a forward bias of 10 V and spectroscopy reveals that emission is dominated by acceptor to band
transitions in the p-GaN thin fi lm. It is suggested that the vertical nanowire architecture of the device leads to
waveguided emission from the thin fi lm through the nanowire array.
KEYWORDS
ZnO nanowire, electroluminescence, LED, waveguiding
Introduction optoelectronic devices. In addition, ZnO and GaN
are well suited materials because of the low lattice
GaN and ZnO are promising materials in the field mismatch of about 1.9% in their wurtzite crystal
of short wavelength optoelectronics due to their structures [8].
inherently wide and direct bandgaps, 3.39 eV and In this paper, we present a nanowire-based light
3.37 eV, respectively [1, 2]. Nanostructures based emi
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