MCMn+1ACn稳定性电子特征第一性原理及研究.pdfVIP

物理 学 报 ActaPhys．Sin．Vo1．63，No．23(2014) 237103 Effectofoxygen implantation on m icrostructuraland opttiiccaallDprroopeerrttiieessooffZnnT1e：：O iinntteerrmm eeddiiaattee-．bband photovoltaicm aterials术 ZhenKang) GuRan) YeJian—Dong))十 GuShu—Lin){ RenFang—Fang) ZhuShun—M ing) HuangShi—Min) TangKun) TangDong—M ing) fangYi) ZhangRong ) ZhengYou—Dou ) 1)(SchoolofElectronicScienceandEngineering，NanjingUniversity,Nanjing210093，China) 2)(DepartmentofElectronicMaterialsEnglneering，ResearchSchoolofPhysicsandEnglneering,theAustralianNational University,Canberra2601，Australia) (Received28May2014；revisedmanuscriptreceived24July2014) Abstraet GroupII—-VIandIII—V· highlymismatchedalloysarepromisingmaterialsystemsintheapplicationofhighefficiency intermediate—bandsolarcell(IBSC)，however，thekeyissuesincludingbandengineeringofintermediatebandstillremain challenging．Inthisstudy，ZnTe：O alloyshavebeenproducedbyisoelectricoxygenimplantationintoZnTesinglecrystal， and theinfluencesofimplantation on themicrostructuralandopticalpropertiesofZnTe：O havebeen investigated in detail． Itisfound thataproperdoseofoxygen ionscan lead to acompressivestrain in the lattice and inducethe formationofintermediatebandlocated ontheenergylevelofN0．45eV below theconductionband．W hileahighdose ofoxygen ionscausesZnTesurfacelayerto become amorphousand enhancesthedeep levelemission around 1．6eV， whichisrelatedtoZnvacancies．ResultsofresonantRamanandtime—resolvedphotoluminescencespectraindicatethat implantation induced intermediateband isrelated tothelocalized exciton emission boundtooxygen isoelectrictrap， andtheassociated photoexcitedcarriershavearelatively longdecaytime．Thissuggeststhatthereductionoflattice distortionandall