a physics-based scheme for potentials of a-sih tft with symmetric dual gate considering deep gaussian dos distribution：一个基于物理的a-sih tft具有对称双栅考虑深高斯dos分布电位方案.pdfVIP

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a physics-based scheme for potentials of a-sih tft with symmetric dual gate considering deep gaussian dos distribution：一个基于物理的a-sih tft具有对称双栅考虑深高斯dos分布电位方案.pdf

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a physics-based scheme for potentials of a-sih tft with symmetric dual gate considering deep gaussian dos distribution：一个基于物理的a-sih tft具有对称双栅考虑深高斯dos分布电位方案

Solid-State Electronics 95 (2014) 46–51 Contents lists available at ScienceDirect Solid-State Electronics journal homepage: www.el /locate/sse A physics-based scheme for potentials of a-Si:H TFT with symmetric dual gate considering deep Gaussian DOS distribution q Jian Qin, R.H. Yao ⇑ School of Electronic and Information Engineering, South China University of Technology, Guang Zhou, China a r t i c l e i n f o a b s t r a c t Article history: Taking deep Gaussian and tail exponential distribution of the density of states into account, a novel Received 22 June 2013 scheme for potentials of amorphous silicon thin ﬁlm transistor using symmetric dual gate has been pres- Received in revised form 15 February 2014 ent. The proposed scheme, valid from below to above threshold regimes, provides a completed solution of Accepted 15 March 2014 the potentials at the surface and mid of the layer without solving any transcendental equation. Validity of Available online 23 April 2014 the work has been veriﬁed by extensive comparison to the rigorous numerical simulations. The calcula- The review of this paper was arranged by tion efﬁciency has ﬁnally been demonstrated. A signiﬁcant promotion is obtained. Prof. S. Cristoloveanu 2014 Elsevier Ltd. All rights reserved. Keywords: Amorphous silicon TFT Surface potential Symmetric dual gate Density of states (DOS) 1. Introducti