6、 Microwave and Photonic Devices and optical absorption.ppt

Specialized English School of Physics Optoelectronic Engineering W. Zhang Chapter 2 Semiconductor Device Table 2-1 summarizes the representative microwave devices and their operational principles. In this chapter, we consider four special microwave devices: the tunnel diode, the IMPATT diode, the BARITT diode, and the transferred-electron device. We shall investigate the operational principles of these devices and how they can be used in microwave applications. Figure 2-15 shows the basic transitions in a semiconductor. When the semiconductor is illuminated, photons are absorbed to create electron-hole pairs as shown at (a) in Figure 2-15 if the photon energy is equal to the bandgap energy, that is hv is equals Eg.). 图2-15显示了半导体中的基本跃迁过程。当光照射半导体时，光子被吸收，产生电子空穴对，如图2-15(a)中光子能量等于禁带宽度，即hv 等于 Eg 。 If hv is greater than Eg, an electron-hole pair is generated and, in addition, excess energy (hv – Eg) is dissipated as shown at (b) in Figure 2-15. Both processes (a) and (b), are called intrinsic transitions (or band-to-band transitions。 如果光子能量hv大于禁带宽度Eg，产生一个电子空穴对，多余的能量会耗散掉，如图2-15(b)，过程(a) 和 (b)都叫做本征跃迁(或带间跃迁)。 On the other hand, for hv less than Eg, a photon will be absorbed only if there are available energy states in the forbidden bandgap due to chemical impurities or physical defects as shown at (c) in Figure 2-15.Process (c) is called extrinsic transition.  另一方面，如果hv小于Eg，只有当禁带里面存在由于化学杂质或物理缺陷产生的杂质能级时才可以发生光的吸收，如图 2-15 (c)所示，过程(c)叫做间接跃迁。 This discussion also is generally true for the reverse situation. For example, an electron at the conduction band edge combining with a hole at the valence edge will result in the emission of a photon with energy equal to that of the bandgap 上面的讨论也适用于相反的过程。例如导带边的电子和价带边的空穴复合，发射一个能量为禁带宽度的光子 Assume that a semiconductor is illuminated from a light source with hv greater than Eg and a photon flux of Φ0(in units of photons per square centimeter per second), As the photon flux travels through the semiconductor, the