第十四章IO环设计_1概述.pptVIP

第十四章 I/O设计及封装 （一） Outlines Basic structure of I/O cells Noise Cancellation ESD Protection Scheme I/O ring design Package Selection Outlines Basic structure of I/O cells Noise Cancellation ESD Protection Scheme I/O ring design Package Selection Performance with Die, Package, Board Three main killers of performance Power supply noise Reference clock noise Signal integrity These challenges are relevant at the die, package, board and system level These challenges have existed at lower speeds but dramatically increase in high speeds I/O Cell I/O Cell – Connect Core to Package Supply Cell max current Analog cell low voltage drop Digital cell Input: w/wo pull-up, pull-down, schmitt Trigger Output: driving strength, high speed, low noise Bi-directional input/output Special Cell power-cut I/O cell, Corner cell …… Basic Structure of I/O cells Output Cell: Pre-driver Provide proper logic operation for IO circuits Level shift (e.g. 1.8v core voltage, 3.3v IO voltage for 0.18u process) Big post-driver IO buffer Provide big driving capability Provide ESD protection ability ESD protection Input Cell: Input buffer w/wo noise immunity (Schmitt Trigger ) W/wo pull up/down function ESD protection Basic Structure of I/O cell – Cont. Analog Input Cell: ESD protection without input resister Power (VDD/VSS): Big ESD protection cell for the I/O ring. Other cells: Filler cell: provide connection for the power/ground ring ESD protection Cell Decoupling cell I/O Layout As standard cell Height Power lines ESD Latch-up Outlines Basic structure of I/O cells Noise Cancellation ESD Protection Scheme I/O Ring Package Selection Noise problem at High Speed I/O Q: Can simply increase driver size to meet high speed requirement? A: No! Problems when output signal at high speed Ringing Bounce EMI Noises Caused by Switching Activity  on Output Ringing Bounce EMI: Electromagnetic Interference EMI radiation is caused by High-frequency current but not by voltage per