a new roue to study the elastic strain of zno epilayer.docVIP

A New Route to Study the Elastic Strain of ZnO Epilayer Grown on Sapphire Zhenxing Feng Grade 2000, Department of Technical Physics, School of Physics Abstract Good crystalline quality ZnO layer, 9.7%, was grown on sapphire (Al2O3) substrate by metalorganic chemical vapor deposition (MOCVD). By using Rutherford backscattering (RBS)/channeling, the tetragonal distortion (eT) was determined. With the help of high resolution x-ray diffraction (XRD), not only the results of RBS/channeling were affirmed, but also the average perpendicular and parallel elastic strains can be calculated to be 0.08%