化学气相沉积法制备碳化硅晶须概念.docx

PAGE \* MERGEFORMAT2 化学气相沉积法制备碳化硅晶须 院系： 作者： 学号： 目录  TOC \h \z \t 1级标题,1,2级标题,2,3级标题,3  HYPERLINK \l _Toc423173272 摘要  PAGEREF _Toc423173272 \h 1  HYPERLINK \l _Toc423173273 Abstract  PAGEREF _Toc423173273 \h 2  HYPERLINK \l _Toc423173274 第一章引言  PAGEREF _Toc423173274 \h 3  HYPERLINK \l _Toc423173275 1． 化学气相沉积法  PAGEREF _Toc423173275 \h 3  HYPERLINK \l _Toc423173276 1.1. CVD发展历史  PAGEREF _Toc423173276 \h 3  HYPERLINK \l _Toc423173277 1.2. CVD技术原理  PAGEREF _Toc423173277 \h 3  HYPERLINK \l _Toc423173278 1.3. 一些新型CVD技术  PAGEREF _Toc423173278 \h 3  HYPERLINK \l _Toc423173279 2. 碳化硅基本性质  PAGEREF _Toc423173279 \h 4  HYPERLINK \l _Toc423173280 第二章利用CVD方法合成SiCw  PAGEREF _Toc423173280 \h 6  HYPERLINK \l _Toc423173281 1. 研究历史  PAGEREF _Toc423173281 \h 6  HYPERLINK \l _Toc423173282 1.1. 反应机理的研究  PAGEREF _Toc423173282 \h 6  HYPERLINK \l _Toc423173283 1.2. 表征手段  PAGEREF _Toc423173283 \h 8  HYPERLINK \l _Toc423173284 2. 研究现状  PAGEREF _Toc423173284 \h 8  HYPERLINK \l _Toc423173285 第三章总结与展望  PAGEREF _Toc423173285 \h 12  HYPERLINK \l _Toc423173286 1. 总结  PAGEREF _Toc423173286 \h 12  HYPERLINK \l _Toc423173287 2. 展望  PAGEREF _Toc423173287 \h 12   摘要 摘要：SiC晶须是纳米级的短纤维，在取向方向上具有很高的机械强度，在生产生活中有着广泛的应用。本文回顾了利用化学气相沉积（CVD）技术合成SiC晶须的发展历史及发展现状，并介绍了这项技术的机理以及在复合材料中的应用。 关键词：化学气相??积；碳化硅；晶须；复合材料  Abstract Abstract: The SiC whisker (SiCw) is a sort of short fibers in nanoscale. It has quite high mechanical strength in the orientation of growth. For this reason, the SiCw has been widely used in industry and normal life. This article reviewed the research history and present situation of the method of using the chemical vapor deposition to synthesize the SiCw, meanwhile introducing the mechanism of this technology and the application in the field of composite material. Key words: chemical vapor deposition; SiC; whisker; composite material  第一章引言 化学气相沉积法 化学气相沉积法，即Chemical Vapor Deposition（一般简称为CV