SiC过渡层制备温度对SiCFDLC复合薄膜血液相容性的影响.pdfVIP

SiC过渡层制备温度对 SiC/F-DLC复合薄膜血液相容性的影响 中文摘要 SiC过渡层制备温度对SiC/F-DLC复合薄膜血液相容性的影响 中文摘要 以 316L不锈钢为基底，SiC晶体为靶材，Ar为源气体，采用磁控溅射法在不同 温度下制备出系列 SiC过渡层。然后以高纯石墨作靶，Ar和 CHF3为源气体在相同工 艺条件下再续镀一层F-DLC薄膜，形成SiC/F-DLC复合薄膜。研究表明，相比于F-DLC 薄膜，复合薄膜的附着力显著增加，血液相容性明显改善。通过样品的拉曼和红外光 谱分析了不同温度下制备的 SiC 过渡层以及复合薄膜结构的演变。结果表明，控制 SiC过渡层制备温度可以有效调制过渡层中C=C键的比例以及-C-C-不饱和键的密度， 复合薄膜中保留较高比例的芳香环式结构以及合适的 F/C 比是薄膜的血液相容性得 以进一步改善的原因，SiC 过渡层制备温度控制在 500℃左右效果尤为明显。SiC 薄 膜和 F-DLC 两种薄膜的界面处形成一定比例的 Si-C 键和 C=C 键是导致复合薄膜附 着力显著上升的直接原因。适当条件下在 316L不锈钢和 F-DLC薄膜之间增加 SiC过 渡层对于增强薄膜的附着力、改善其血液相容性是可行、有效的。 关键词：磁控溅射 SiC/F-DLC复合薄膜 血液相容性 附着力 作 者：佘 清 指导老师：江美福 I 英文摘要 SiC过渡层制备温度对 SiC/F-DLC复合薄膜血液相容性的影响 Effects of preparation temperature of SiC intermediate layers on the hemocompatibility of SiC/F-DLC composite films Abstract A series of SiC intermediate layers with different preparation temperatures were prepared by radio frequency magnetron sputtering on 316L stainless steel substrates by using SiC as crystal target and Argon as source gases. And then depositing fluorinated diamond-like carbon films (F-DLC) on the series of SiC intermediate layers under the same deposition condition with trifluromethane (CHF3) and Argon as source gases, and pure graphite as a target, so series of SiC/F-DLC composite films come into being. The results show that the composite films have stronger adhesion and better hemocompatibility than that of F-DLC films. The structure evolution with preparation temperatures of SiC intermediate layers and SiC/F-DLC composite films were stu