BTU diffusion宣讲.ppt

June 16, 2007 In-Line Diffusion In-line Diffusion System Phosphorus Doper In-Line Solar Cell Process Process Requirements Process Requirements Clean Processing Environment Phosphorus Doping Phosphorus Dopant Uniform and Repeatable Dopant Application Coating within ±2 milligrams Thermal Profile Fast Ramp to 800-900°C Hold 8-15 minutes. Temperature Uniformity ±2°C Fast Cool to Room Temperature Process Requirements (cont’d.) Atmosphere Nitrogen/Air Cleanliness Critical Low Velocity/Low Flow Conveyor Speed High Volume 25-30 IPM (63.5-76.2 cm/min) Low Volume 12-15 IPM (30.5-38 cm/min) System Requirements Unit of Measure Sheet Resistance 40-60 Ohm/sq. (future moving to 70 Ohms/sq) Uniformity ±3 Ohms/sq. In-line Diffusion System Integrated Phosphorus Doper and TFQ Diffusion Furnace 1500 Wafers per Hour (5 Lanes) In-Line Phosphorus Doper Ultrasonic ? Technology (USI) Ultrasonic Direct Spray Deposition Applies Dopant to silicon wafer Greatest flexibility to control coating thickness and uniformity In-line TFQ Diffusion Furnace Thermal Uniformity ±2°C Heater Trim Control Quartz Lined Process Chamber Heated Exhaust with Residue Traps Phosphorus Doper USI Relationship OEM arrangement utilizing USI spray technology Doper is a BTU Product BTU buys spray coater subsystem from USI Integrates into Doper BTU exclusivity Production PV applications (Diffusion) USI Lab scale and RD PV applications Direct Spray Doper Ultrasonic? Ultrasonic Nozzle-less Spray Technology Traversing Spray Head Precision Liquid Delivery System Ultrasonic Spray Head Nozzle-less spray head – vibrating at ultrasonic frequency (20 kHz) Ultrasonic transducer Titanium spray forming tip Liquid is applied externally to the vibrating spray forming tip Liquid flow rate is controlled electronically All parameters are software controlled Spray is shaped by directed air stream Ultrasonic Spray Head Doper Features and Benefits Diffusion Furnace In-line Diffusion Profile Effects of Trim Control 1°C of non-uniformity equ