电子二班110-111-B3 李鑫2008203.docVIP

If we assume the Boltzmann approximation to be valid ,the from Equation(3.11)we have . We can solve for form this equation and obtain (3.63) Where is given by Equation (3.60).If we Consider an n-type semiconductor in which , the ,so that (3.64) The distance between the bottom of the Conduction band and the Fermi is a logarithmic function of the donor concentration. As the donor concentration increases, the Fermi level moves conduction band. Conversely, if the Fermi level moves closer to the conduction band, then the electron concentration in the conduction band is increasing. We can note that if we have a compensated semiconductor, then the term in Equation(3.64) is simply rep;aced by , or the net effe ctive donor concentration. EXAMPLE 3.14 OBJECTIVE Deermine the required donor impurity concentration to obtain a specified Fermi energy. Silicon at contains an acceptor impurity concentration of . Determine the concentration of donor impurity atoms that must be added so that the silicon is n type and the Fermi energy id below the conduction-band edge. (Solution From Equation (3.64),we have Which can be rewritten as Then Or (Comment A compensated semiconductor can be fabricated to provide aspecific Fenri energy level. Exercise Problem EX3.14 determine the position of the Fermi level with respect to the valence-band energy in p-type GaAs at . The doping concentrations are We can develop a slightly different expression for the position of the Fermi level. We had form Equation (3.39) that . We can solve for as (3.65) Equation(3.65) can be used specifically for an n-type semiconductor, where is given by Equation(3.60), to find the difference between the Fermi level and the intrinsic Fermi level sa a function of the donor concentration. We can note that,if