108--109 B02.docVIP

We can note that, for a compensated p-type semiconductor, the minority-carrier electron concentration is determined from EXAMPLE 3.13 OBJECTIVE Determine the required impurity doping concentration in a semiconductor material. A silicon power device with n-type material is to be operated at T=475 k. At this temperature, the intrinsic carrier concentration must contribute no more than 3 percent of the total electron concentration. Determine the minimum doping concentration required to meet this specification. (As a first approximation, neglect the variation of with temperature.) Solution At T=475 K, the intrinsic carrier concentration is found from Or Which yields For the intrinsic carrier concentration to contribute no more than 3 percent of the total electron concentration, we set . From Equation(3.60), we have Or Which yields Comment If the temperature remains less than or equal to 475 K, or if the impurity doping concentration is greater than ,then the intrinsic carrier concentration will contribute less than 3 percent of total electron concentration. Exercise Problem EX3.13 A germanium power device with n-type material is to operate at temperature of . At this temperature,the intrinsic carrier concentration must contribute no more than 10 percent of the total electron concentration. Determine the minimum donor concentration required to meet this specification.(As a first approximation, neglect the variation of with temperature.) Equations（3.60）and (3.62) are used to calculate the majority-carrier electron concentration in an n-type semiconductor and majority-carrier hole concentration in a p-type semiconductor, respectively. The minority-carrier hole concentration in an n-type semiconductor could, theoretically, be calculated from Equation (3.62). However, we would be subtracting two numbers on the order of , for example, to obtai