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Behavioral Modeling of Memcapacitor Dalibor BIOLEK 1,2, Zdeněk BIOLEK 3, Viera BIOLKOVá 4 1 Dept. of Electrical Engineering, University of Defense, Kounicova 65, 662 10 Brno, Czech Republic2 Dept. of Microelectronics, Brno University of Technology, Technická 10, 616 00 Brno, Czech Republic3 S?IE?, ?kolní 1610, 756 61 Ro?nov p. R., Czech Republic4 Dept. of Radio Electronics, Brno University of Technology, Purkyňova 118, 612 00 Brno, Czech Republic dalibor.biolek@unob.cz, biolek@valachnet.cz, biolkova@feec.vutbr.cz Abstract. Two behavioral models of memcapacitor are developed and implemented in SPICE-compatible simulators. Both models are related to the charge-controlled memcapacitor, the capacitance of which is controlled by the amount of electric charge conveyed through it. The first model starts from the state description of memcapacitor whereas the second one uses the memcapacitor constitutive relation as the only input data. Results of transient analyses clearly show the basic fingerprints of the memcapacitor. Keywords Memcapacitor, memristor, SPICE, constitutive relation. Introduction In 1971, Leon Chua introduced the so-called memristor (= memory resistor) into the modern circuit theory [1]. 37 years later, the solid-state memristive device was fabricated in HP laboratories [2]. It led to a sharp rise of interest in memristive systems [3] in both the technological and the application domains. In December 2008, Chua proposed other hypothetical “mem-elements” from the nano-world, the memcapacitor and meminductor. Since all the above elements are not currently available as off-the-shelf devices, the role of modeling them increases, particularly with the aim of implementing such models in the current programs for circuit simulation. One of the first SPICE models of memristor and memcapacitor were described in [4] and [5], respectively, starting from the general methodology given in [6]. These models were implemented in PSpice. Also note that the technique o